PD -95437
IRF7526D1PbF
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Co-packaged HEXFET ? Power
MOSFET and Schottky Diode
FETKY TM MOSFET & Schottky Diode
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P-Channel HEXFET
Low V F Schottky Rectifier
Generation 5 Technology
Micro8 TM Footprint
Lead-Free
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
V DSS = -30V
R DS(on) = 0.20 ?
Schottky Vf = 0.39V
Description
Top View
The FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8 package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
an ideal
profile (<1.1mm) of the Micro8
will allow it to fit easily into extremely thin application
TM
TM
device for applications where printed circuit board space is at a premium. The low
TM
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Micro8
TM
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current à
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt á
Junction and Storage Temperature Range
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
100
°C/W
Notes:
? Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
? I SD ≤ -1.2A, di/dt ≤ 160A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Pulse width ≤ 300μs – duty cycle ≤ 2%
? When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
02/22/05
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